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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque Mounting force TO-264 PLUS247 (IXFK) (IXFX) Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
IXFK20N120P IXFX20N120P
trr
RDS(on)
VDSS ID25
= 1200V = 20A 570m 300ns
Maximum Ratings 1200 1200 30 40 20 50 10 1 15 780 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5..27 10 6 V V V V A A A J V/ns W C C C C C Nm/lb.in. N/lb. g g
TO-264 (IXFK)
G
D
S
(TAB)
PLUS247 (IXFX)
(TAB) G = Gate S = Source D = Drain TAB = Drain
Features Fast intrinsic diode International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C
Characteristic Values Min. Typ. Max. 1200 3.5 6.5 200 25 5 570 V V nA A mA m
Applications: High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2008 IXYS CORPORATION,All rights reserved
DS99854B(04/08)
IXFK20N120P IXFX20N120P
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 10A, -di/dt = 100A/s VR = 100V, VGS = 0V 0.84 9 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS= 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 10 16 11.1 600 60 1.60 49 45 72 70 193 74 85 0.16 S nF pF pF ns ns ns ns nC nC nC C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. 20 80 1.5 300 A A V ns C A
PLUS247TM (IXFX) Outline
Note 1: Pulse test, t 300s; duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
6,404,065 B1 6,534,343 6,583,505
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK20N120P IXFX20N120P
Fig. 1. Output Characteristics @ 25C
20 18 16 30 14 VGS = 10V 9V 40 35 VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
12 10 8 6
8V
25 20 15 10 8V
4 2 0 0 2 4 6 8 10 12 7V 5 0 0 5 10 15 20 25 30 7V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
20 18 16 VGS = 10V 8V 2.6 2.4 2.2
Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
14
2.0 1.8 1.6 1.4 1.2 1.0 0.8
I D = 20A I D = 10A
ID - Amperes
12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 6V 7V
0.6 0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current
2.4 VGS = 10V 2.2 2.0 1.8 1.6 1.4 1.2 TJ = 25C 1.0 0.8 0 5 10 15 20 25 30 35 40 TJ = 125C 22 20 18
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
16
ID - Amperes
14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2008 IXYS CORPORATION,All rights reserved
IXFK20N120P IXFX20N120P
Fig. 7. Input Admittance
35 30 25 35 TJ = - 40C 30 25
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
25C 20 15 10 5 0 125C
20 15 10 5 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 TJ = 125C 25C - 40C
0
5
10
15
20
25
30
35
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
60 16 14 50 12 VDS = 600V I D = 10A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C
40
10 8 6 4 2 0
30
20
10
0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
0
40
80
120
160
200
240
280
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1.000
Fig. 12. Maximum Transient Thermal Impedance
f = 1 MHz Capacitance - PicoFarads
Ciss 10,000
1,000
Coss
Z(th)JC - C / W
30 35 40
0.100
0.010
100 Crss 10 0 5 10 15 20 25 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_20N120P(86) 04-03-08-B

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